Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract

NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR

Organization Name

kioxia corporation

Inventor(s)

Kunifumi Suzuki of Yokkaichi Mie (JP)

Yuuichi Kamimuta of Nagoya Aichi (JP)

NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096389 titled 'NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR

Simplified Explanation

The memory cell described in the patent application consists of a core structure, semiconductor layer, insulating layer, ferroelectric layer, first electrode, second electrode, insulating layer, and antiferroelectric layer.

• Core structure extending in a first direction orthogonal to a semiconductor substrate
• Semiconductor layer in contact with the core structure
• Insulating layer in contact with the semiconductor layer
• Ferroelectric layer in contact with the insulating layer
• First electrode extending in a second direction orthogonal to the first direction
• Second electrode adjacent to the first electrode, extending in the second direction
• Insulating layer stacked between the first and second electrodes
• Antiferroelectric layer in contact with the insulating layer and the ferroelectric layer

Potential Applications

This technology could be applied in non-volatile memory devices, data storage systems, and integrated circuits.

Problems Solved

This technology solves the problem of data loss in memory cells, improves data retention, and enhances memory cell performance.

Benefits

The benefits of this technology include increased data storage capacity, faster data access speeds, and improved reliability of memory devices.

Potential Commercial Applications

The potential commercial applications of this technology include solid-state drives, smart devices, and cloud computing servers.

Possible Prior Art

One possible prior art for this technology could be the use of ferroelectric materials in memory devices to enhance data retention and performance.

How does this memory cell technology compare to existing memory technologies in terms of speed and reliability?

This article does not provide a direct comparison between this memory cell technology and existing memory technologies in terms of speed and reliability. Further research and testing would be needed to determine the performance advantages of this technology.

What are the potential challenges in scaling up this memory cell technology for mass production?

This article does not address the potential challenges in scaling up this memory cell technology for mass production. Factors such as manufacturing costs, production efficiency, and compatibility with existing fabrication processes could pose challenges that need to be explored further.

Original Abstract Submitted

a memory cell includes: a core structure extending in a first direction orthogonal to a semiconductor substrate; a semiconductor layer extending in the first direction and in contact with the core structure; an insulating layer extending in the first direction and in contact with the semiconductor layer; a ferroelectric layer extending in the first direction and in contact with the insulating layer; a first electrode extending in a second direction orthogonal to the first direction and in contact with the ferroelectric layer; a second electrode adjacent to the first electrode in the first direction, extending in the second direction, and in contact with the ferroelectric layer; an insulating layer stacked in the first direction and disposed between the first and second electrodes; and an antiferroelectric layer disposed between the first and second electrodes, and in contact with the insulating layer and the ferroelectric layer.