18157906. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chi-Chung Jen of Kaohsiung City (TW)
Ya-Chi Hung of Kaohsiung City (TW)
Yu-Chun Shen of Tainan City (TW)
Shun-Neng Wang of New Taipei City (TW)
Wen-Chih Chiang of Hsinchu City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157906 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for forming a triple-stacked polysilicon structure on a semiconductor device substrate. This structure is used as a stop layer during a chemical-mechanical polishing (CMP) operation.
- The method involves using one or more semiconductor processing tools to create a triple-stacked polysilicon structure on the substrate.
- Additionally, the method includes forming one or more polysilicon-based devices on the substrate, with the height of the triple-stacked polysilicon structure being greater than the height of these devices.
- During the CMP operation, the triple-stacked polysilicon structure acts as a stop layer, preventing excessive removal of material from the substrate.
Potential Applications
- This technology can be applied in the manufacturing of semiconductor devices, such as integrated circuits.
- It can be used to improve the planarity and uniformity of the semiconductor device surface during the CMP process.
Problems Solved
- The triple-stacked polysilicon structure provides a reliable stop layer during the CMP operation, preventing over-polishing and potential damage to the substrate.
- It helps to achieve a more uniform and flat surface on the semiconductor device, which is crucial for the performance and reliability of the device.
Benefits
- The use of a triple-stacked polysilicon structure as a stop layer improves the efficiency and accuracy of the CMP process.
- It allows for better control over the material removal during polishing, reducing the risk of damaging the substrate.
- The resulting planarity and uniformity of the semiconductor device surface enhance the device's performance and yield.
Original Abstract Submitted
In some implementations, one or more semiconductor processing tools may form a triple-stacked polysilicon structure on a substrate of a semiconductor device. The one or more semiconductor processing tools may form one or more polysilicon-based devices on the substrate of the semiconductor device, wherein the triple-stacked polysilicon structure has a first height that is greater than one or more second heights of the one or more polysilicon-based devices. The one or more semiconductor processing tools may perform a chemical-mechanical polishing (CMP) operation on the semiconductor device, wherein performing the CMP operation comprises using the triple-stacked polysilicon structure as a stop layer for the CMP operation.
