US Patent Application 17804530. MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS simplified abstract
MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Everett A. Mcteer of Eagle ID (US)
Farrell M. Good of Meridian ID (US)
John M. Meldrim of Boise ID (US)
Jordan D. Greenlee of Boise ID (US)
Justin D. Shepherdson of Meridian ID (US)
MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17804530 titled 'MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS
Simplified Explanation
- The patent application describes a microelectronic device that consists of alternating conductive and insulative structures. - The insulative structures have interfacial regions and a central region. - The interfacial regions are doped with carbon and/or boron. - The insulative structures have a lower concentration of carbon and/or boron compared to the interfacial regions. - The invention also includes other microelectronic devices, electronic systems, and methods.
Original Abstract Submitted
A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.
