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Category:G11C16/04
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Pages in category "G11C16/04"
The following 148 pages are in this category, out of 148 total.
1
- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17697386. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17709910. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17810067. STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17816651. VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT simplified abstract (Micron Technology, Inc.)
- 17817408. MEMORY DEVICE AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17825764. NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847948. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851865. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17860711. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17861573. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17871358. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17896775. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
- 17897448. DISCHARGE CIRCUITS simplified abstract (Micron Technology, Inc.)
- 17897460. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897976. ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17898827. SELF-SUPPORTING SGD STADIUM simplified abstract (Micron Technology, Inc.)
- 17935122. STORAGE DEVICE USING WAFER-TO-WAFER BONDING AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17935502. NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17951337. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17954757. CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY simplified abstract (Western Digital Technologies, Inc.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18064635. NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18148579. NONVOLATILE MEMORY DEVICE PROVIDING INPUT/OUTPUT COMPATIBILITY AND METHOD FOR SETTING COMPATIBILITY THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149206. MEMORY DEVICES HAVING CELL OVER PERIPHERY STRUCTURE, MEMORY PACKAGES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149302. MEMORY DEVICE FOR COLUMN REPAIR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18176347. FLASH MEMORY DEVICE FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SENSING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177704. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18190398. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18197283. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18202061. MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS simplified abstract (Micron Technology, Inc.)
- 18203223. OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A MEMORY DEVICE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18207979. OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18234046. MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract (Micron Technology, Inc.)
- 18234429. MEMORY DEVICES WITH A LOWER EFFECTIVE PROGRAM VERIFY LEVEL simplified abstract (Micron Technology, Inc.)
- 18235183. ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18237815. DYNAMIC LATCHES ABOVE A THREE-DIMENSIONAL NON-VOLATILE MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18301575. VERTICAL MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18327846. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18335680. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18337605. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18338757. MEMORY DEVICE INCLUDING VERTICALLY STACKED PERIPHERAL REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18356324. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18364397. MICROELECTRONIC DEVICES WITH MIRRORED BLOCKS OF MULTI-SET STAIRCASED STADIUMS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18367619. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18372949. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18450607. MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18450969. SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18460203. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18460516. MEMORY CONTROLLER, MEMORY CONTROLLER CONTROL METHOD, AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18471746. SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18524477. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18529731. SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN simplified abstract (Micron Technology, Inc.)
- 18539798. MULTI-SAMPLED, CHARGE-SHARING THERMOMETER IN MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
K
- Kioxia corporation (20240094914). MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract
- Kioxia corporation (20240094957). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240094959). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240095162). MEMORY CONTROLLER, MEMORY CONTROLLER CONTROL METHOD, AND MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia corporation (20240096413). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096416). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096417). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096418). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096419). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096422). STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096424). MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096429). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
S
- Samsung electronics co., ltd. (20240096415). VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract
- Samsung electronics co., ltd. (20240096420). NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105267). NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240107773). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240120007). SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240126453). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract
- Samsung electronics co., ltd. (20240130127). SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240130131). VERTICAL MEMORY DEVICE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- SK hynix Inc. patent applications on January 18th, 2024
U
- US Patent Application 17752207. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
- US Patent Application 17752662. MEMORY DEVICE WITH REDUCED AREA simplified abstract
- US Patent Application 17804184. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME simplified abstract
- US Patent Application 17824350. METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHING BOOST TIMING simplified abstract
- US Patent Application 17825048. HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 17825193. LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 17825337. NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION simplified abstract
- US Patent Application 17828685. NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT simplified abstract
- US Patent Application 17879140. Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
- US Patent Application 18232386. METHODS OF CONFIGURING A MEMORY simplified abstract
- US Patent Application 18232539. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract
- US Patent Application 18362198. Novel Bank Design with Differential Bulk Bias in eFuse array simplified abstract
- US Patent Application 18450241. Non-Volatile Memory Device and Method of Operating the Same simplified abstract