17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

SANG-WON Park of SEOUL (KR)

WON-TAECK Jung of HWASEONG-SI (KR)

HAN-JUN Lee of SEOUL (KR)

SU CHANG Jeon of SEOUL (KR)

NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17706097 titled 'NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME

Simplified Explanation

The abstract describes a nonvolatile memory system that includes two memory cell arrays and a peripheral circuit. The peripheral circuit is responsible for programming the memory cells with different threshold voltage levels.

• The nonvolatile memory system includes two memory cell arrays and a peripheral circuit.
• The first memory cell array has a first selection transistor connected to a first string selection line.
• The second memory cell array has a second selection transistor connected to a second string selection line.
• The first and second string selection lines are separated by a first cutting line.
• The peripheral circuit provides a first program voltage to the first selection transistor and a second program voltage to the second selection transistor.
• The first selection transistor is programmed with a first threshold voltage in response to the first program voltage.
• The second selection transistor is programmed with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.

Potential applications of this technology:

• Nonvolatile memory systems are commonly used in electronic devices such as computers, smartphones, and tablets.
• This technology can be applied in various industries that require data storage and retrieval, such as automotive, aerospace, and healthcare.

Problems solved by this technology:

• Nonvolatile memory systems need to store data reliably and efficiently.
• This technology addresses the need for programming memory cells with different threshold voltage levels.

Benefits of this technology:

• The use of two memory cell arrays allows for more efficient programming of memory cells.
• The ability to program memory cells with different threshold voltage levels provides flexibility in data storage and retrieval.
• This technology improves the reliability and performance of nonvolatile memory systems.

Original Abstract Submitted

A nonvolatile memory may include; a first memory cell array including a first selection transistor connected to a first string selection line, a second memory cell array including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line, and a peripheral circuit. The peripheral circuit may provide a first program voltage to the first selection transistor, provide a second program voltage to the second selection transistor different from the first program voltage, program the first selection transistor with a first threshold voltage in response to the first program voltage, and program the second selection transistor with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.