Kioxia corporation (20240096413). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Natsuki Sakaguchi of Chiyoda Tokyo (JP)
Takashi Maeda of Kamakura Kanagawa (JP)
Rieko Funatsuki of Yokohama Kanagawa (JP)
Hidehiro Shiga of Yokohama Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096413 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The control circuit of a semiconductor memory device performs a write operation on a memory cell transistor by first lowering the threshold voltage of the memory cell transistor, then performing a precharge operation, and finally a second pulse application operation.
- The precharge operation involves charging the bit line connected to the memory cell transistor by applying a ground voltage to the word line connected to the gate of the memory cell transistor and applying a voltage higher than the ground voltage to a source line.
- In the second pulse application operation, a program voltage is applied to the word line while the first select transistor is turned on and the second select transistor is turned off.
Potential Applications
This technology can be applied in various semiconductor memory devices such as flash memory, DRAM, and SRAM.
Problems Solved
1. Efficiently performing write operations on memory cell transistors. 2. Ensuring reliable and accurate data storage in semiconductor memory devices.
Benefits
1. Improved performance and reliability of semiconductor memory devices. 2. Enhanced data retention and retrieval capabilities. 3. Increased efficiency in write operations.
Potential Commercial Applications
Optimizing write operations in semiconductor memory devices for consumer electronics, data storage systems, and computing devices.
Possible Prior Art
One possible prior art could be the use of precharge operations in memory devices to prepare the bit lines for write operations.
Unanswered Questions
How does this technology compare to existing methods of write operations in semiconductor memory devices?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.
What are the specific voltage levels used in the precharge and pulse application operations?
The article does not detail the exact voltage levels applied in each operation, which could be crucial for understanding the implementation of this technology.
Original Abstract Submitted
a control circuit of a semiconductor memory device performs a write operation on a memory cell transistor of the semiconductor memory device by performing a first pulse application operation of lowering a threshold voltage of the memory cell transistor, a precharge operation, and then a second pulse application operation. in the precharge operation, in a state in which first and second select transistors connected to the memory cell transistor are turned on, a bit line connected to the memory cell transistor is charged by applying a ground voltage to a word line connected to a gate of the memory cell transistor and applying a voltage higher than the ground voltage to a source line. in the second pulse application operation, in a state in which the first select transistor is turned on and the second select transistor is turned off, a program voltage is applied to the word line.
