18367619. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jaemin Jung of Suwon-si (KR)

Byongju Kim of Suwon-si (KR)

Wonjun Park of Suwon-si (KR)

Donghwa Lee of Suwon-si (KR)

Changheon Cheon of Suwon-si (KR)

Dongsung Choi of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18367619 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The semiconductor device described in the patent application consists of gate electrodes, channel structures, gate insulating layers, and bit lines. The channel structures penetrate the gate electrodes and are made up of stacked layers of different oxide semiconductor materials.

• Gate electrodes are spaced apart vertically on a substrate.
• Channel structures penetrate and extend in the vertical direction through the gate electrodes.
• Each channel structure consists of a stacked structure of first and second oxide semiconductor channel layers with different conductivities.
• A gate insulating layer is placed between the channel layer and each gate electrode.
• Bit lines are connected to the channel structures.

Potential Applications

• Advanced semiconductor devices
• High-performance electronics
• Integrated circuits

Problems Solved

• Improved conductivity and performance
• Enhanced functionality of semiconductor devices
• Increased efficiency in electronic components

Benefits

• Higher speed and efficiency in electronic devices
• Enhanced conductivity and performance
• Improved integration and miniaturization of circuits

Original Abstract Submitted

A semiconductor device includes a plurality of gate electrodes spaced apart from each other in a vertical direction on a substrate, a plurality of channel structures respectively penetrating a plurality of gate electrodes and extending in the vertical direction, each comprising a channel layer having a stacked structure of a first oxide semiconductor channel layer and a second oxide semiconductor channel layer which have different conductivities, and a gate insulating layer disposed between the channel layer and each of the plurality of gate electrodes, and a plurality of bit lines disposed on the plurality of channel structures and respectively connected to the plurality of channel structures, and the gate insulating layer, the first oxide semiconductor channel layer, and the second oxide semiconductor channel layer are sequentially disposed.