US Patent Application 18450241. Non-Volatile Memory Device and Method of Operating the Same simplified abstract

Non-Volatile Memory Device and Method of Operating the Same

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Dong-Hun Kwak of Hwaseong-si (KR)]]

Non-Volatile Memory Device and Method of Operating the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18450241 titled 'Non-Volatile Memory Device and Method of Operating the Same

Simplified Explanation

The patent application describes a method for operating a non-volatile memory device.

• The method involves performing a sensing operation on the memory device during a specific time period.
• The sensing operation is divided into three sections.
• Different voltage levels are applied to selected word lines in each section.
• The voltage level in the first section is variable based on a target voltage level.
• The voltage level in the second section is different from the first section.
• The voltage level in the third section is different from the second section.
• The first voltage level increases as the target voltage level increases.

Original Abstract Submitted

A method of operating a non-volatile memory device includes performing a first sensing operation on the non-volatile memory device during a first sensing time including a first section, a second section, and a third section. The performing of the first sensing operation includes applying a first voltage level, which is variable according to a first target voltage level, to a selected word line in the first section, applying a second voltage level, which is different from the first voltage level, to the selected word line in the second section, and applying the first target voltage level, which is different from the second voltage level, to the selected word line in the third section. The first voltage level becomes greater as the first target voltage level becomes greater.