Kioxia corporation (20240096418). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing methods of connecting stacked bodies in semiconductor memory devices?
- 1.9.3 What are the specific materials used in the layers of the interposed portion, and how do they contribute to the overall functionality of the device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Satoshi Nagashima of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096418 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is located between the first and second stacked bodies, while the columnar body consists of a first columnar portion within the first stacked body, a second columnar portion within the second stacked body, and a connection portion in the interposed portion connecting the first and second columnar portions. The interposed portion contains multiple layers, including a first insulating material, a second layer with the same insulating material, and a third layer with a different material.
- The semiconductor memory device has a complex structure with multiple stacked bodies and an interposed portion for connecting them.
- The columnar body within the device plays a crucial role in ensuring proper connectivity between the stacked bodies.
- The layers within the interposed portion serve specific functions, such as insulation and material differentiation.
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM.
Problems Solved
This technology solves the problem of efficient connectivity between stacked bodies in semiconductor memory devices, ensuring reliable performance and data storage.
Benefits
The benefits of this technology include improved data storage capacity, faster data access speeds, and enhanced overall performance of semiconductor memory devices.
Potential Commercial Applications
One potential commercial application of this technology is in the production of high-capacity and high-performance solid-state drives (SSDs) for consumer electronics and data storage servers.
Possible Prior Art
One possible prior art for this technology could be the use of similar interposed portions in semiconductor devices for connectivity purposes.
Unanswered Questions
How does this technology compare to existing methods of connecting stacked bodies in semiconductor memory devices?
This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages of this new approach.
What are the specific materials used in the layers of the interposed portion, and how do they contribute to the overall functionality of the device?
While the abstract mentions different materials in the layers, it does not delve into the specifics of these materials and their individual roles in the device's operation.
Original Abstract Submitted
a semiconductor memory device includes a first stacked body, a second stacked body, an interposed portion, and a columnar body. the interposed portion is disposed between the first stacked body and the second stacked body. the columnar body includes a first columnar portion extending in a first direction inside the first stacked body, a second columnar portion extending in the first direction inside the second stacked body, and a connection portion disposed in the interposed portion and connecting the first columnar portion to the second columnar portion. at least part of the interposed portion has a first layer containing a first insulating material, a second layer disposed between the first layer and the second stacked body in the first direction and containing the first insulating material, and a third layer disposed between the first layer and the second layer in the first direction and containing a first material different from the first insulating material.
