Kioxia corporation (20240096416). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing memory storage solutions in terms of performance and efficiency?
- 1.11 What are the potential challenges or limitations of implementing this technology in mass production of semiconductor memory devices?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Keisuke Suda of Yokkaichi (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096416 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes stacked interconnects with two layers, a first interconnect layer with two distinct areas in a first direction, and a second interconnect layer above it in a second direction. Memory pillars are arranged in each area, passing through the interconnect layers.
- Stacked interconnects with two layers
- Memory pillars passing through interconnect layers
- Memory device design for improved performance
Potential Applications
The technology described in the patent application could be applied in various semiconductor memory devices, such as DRAM, NAND flash, and SSDs, to enhance memory storage capacity and performance.
Problems Solved
This technology solves the problem of limited memory storage capacity and slow data transfer speeds in conventional semiconductor memory devices by optimizing the design with stacked interconnects and memory pillars.
Benefits
The benefits of this technology include increased memory storage capacity, improved data transfer speeds, and enhanced overall performance of semiconductor memory devices.
Potential Commercial Applications
- "Enhanced Memory Storage Technology for Semiconductor Devices"
Possible Prior Art
There may be prior art related to stacked interconnects and memory pillars in semiconductor memory devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing memory storage solutions, leaving a gap in understanding the competitive advantages of this innovation.
What are the potential challenges or limitations of implementing this technology in mass production of semiconductor memory devices?
The article does not address the potential challenges or limitations that may arise during the mass production and commercialization of semiconductor memory devices using this technology, leaving room for further exploration and analysis.
Original Abstract Submitted
according to one embodiment, a semiconductor memory device includes: stacked interconnects including a first interconnect layer and a second interconnect layer, the first interconnect layer including a first area and a second area arranged in a first direction, the second interconnect layer being arranged above the first interconnect layer in a second direction intersecting the first direction, the second interconnect layer not including the first area and including the second area; a first memory pillar arranged in the first area and passing through the first interconnect layer in the second direction; and a second memory pillar arranged in the second area and passing through the first interconnect layer and the second interconnect layer in the second direction.
