Samsung electronics co., ltd. (20240096415). VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract
Contents
- 1 VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
Organization Name
Inventor(s)
Changseok Lee of Suwon-si (KR)
Seunggeol Nam of Suwon-si (KR)
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096415 titled 'VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
Simplified Explanation
The abstract describes a nonvolatile memory device with a channel layer, gate electrodes, spacers, and a gate insulating layer. The channel layer includes a two-dimensional semiconductor material with an electrically p-type property.
- The nonvolatile memory device includes a channel layer, gate electrodes, spacers, and a gate insulating layer.
- The channel layer consists of a two-dimensional semiconductor material that is electrically p-type.
Potential Applications
The technology described in the patent application could be applied in:
- Nonvolatile memory devices
- Semiconductor manufacturing
Problems Solved
The technology addresses the following issues:
- Enhancing the performance of nonvolatile memory devices
- Improving the efficiency of semiconductor devices
Benefits
The benefits of this technology include:
- Increased data storage capacity
- Faster data access speeds
- Enhanced overall device performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art for this technology could be the use of similar semiconductor materials in memory devices.
Unanswered Questions
How does this technology compare to existing nonvolatile memory devices in terms of performance?
The article does not provide a direct comparison between this technology and existing nonvolatile memory devices.
What are the specific manufacturing processes involved in producing this nonvolatile memory device?
The article does not detail the specific manufacturing processes involved in producing the nonvolatile memory device.
Original Abstract Submitted
a nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers alternately arranged with each other in the first direction, and a gate insulating layer extending in the first direction. each of the plurality of gate electrodes and each of the plurality of spacers may extend in a second direction crossing the first direction. the gate insulating layer may extend in the first direction. the gate insulating layer may be between the channel layer and the plurality of gate electrodes. the channel layer may include a two-dimensional semiconductor material having an electrically p-type property.
