17825764. NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825764 titled 'NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE
Simplified Explanation
The patent application describes a nonvolatile memory device that consists of two semiconductor layers. The first layer includes various components such as word-lines, selection lines, and a memory cell array. The second layer includes two address decoders.
- The first semiconductor layer contains word-lines, selection lines, and a memory cell array.
- The second semiconductor layer consists of two address decoders.
- The first address decoder is located under a region adjacent to one side of the cell region and drives the word-lines, selection lines, and ground selection lines.
- The second address decoder is located under a region adjacent to the other side of the cell region and drives the selection lines and ground selection lines.
Potential applications of this technology:
- Nonvolatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
- The technology can be applied in data storage systems, allowing for faster and more efficient data access.
Problems solved by this technology:
- The design of the nonvolatile memory device addresses the need for efficient driving of word-lines, selection lines, and ground selection lines.
- The use of two address decoders helps in optimizing the performance and functionality of the memory device.
Benefits of this technology:
- The nonvolatile memory device offers improved performance and reliability.
- The design allows for efficient driving of various components, resulting in faster data access and storage.
- The use of two address decoders enhances the functionality and flexibility of the memory device.
Original Abstract Submitted
A nonvolatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes word-lines, at least one string selection line, at least one ground selection line, and a memory cell array including at least one memory block. The second semiconductor includes a first address decoder and a second address decoder. The first address decoder is disposed under a first extension region adjacent to a first side of a cell region and includes a plurality of first pass transistors driving the word-lines, the at least one string selection line, and the at least one ground selection line. The second address decoder is disposed under a second extension region adjacent to a second side of the cell region and includes a plurality of second pass transistors driving the at least one string selection line and the at least one ground selection line.
