17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME
Organization Name
Inventor(s)
Kyunghae Lee of Seosan-si (KR)
Sangwan Nam of Hwaseong-si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17693571 titled 'NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME
Simplified Explanation
The patent application describes a nonvolatile memory device that includes a memory cell array, a voltage generator, a voltage path circuit, and a wordline defect detection circuit. Here is a simplified explanation of the abstract:
- The memory cell array consists of memory cells and wordlines that are connected to the memory cells.
- The voltage generator generates a wordline voltage that is applied to the wordlines.
- The voltage path circuit transfers the wordline voltage from the voltage generator to the wordlines.
- The wordline defect detection circuit is connected to a measurement node between the voltage generator and the voltage path circuit.
- In a compensation mode, the wordline defect detection circuit measures a path leakage current of the voltage path circuit based on a measurement voltage of the measurement node and generates an offset value corresponding to the path leakage current.
- In a defect detection mode, the wordline defect detection circuit determines the defect of each wordline based on the offset value and the measurement voltage.
Potential applications of this technology:
- Nonvolatile memory devices, such as flash memory or solid-state drives.
- Electronic devices that require reliable and efficient memory storage, such as smartphones, tablets, and laptops.
Problems solved by this technology:
- Detecting defects in wordlines of a memory cell array.
- Compensating for path leakage current in the voltage path circuit.
- Improving the reliability and performance of nonvolatile memory devices.
Benefits of this technology:
- Enhanced defect detection capability, leading to improved memory cell array performance.
- Efficient compensation for path leakage current, ensuring accurate voltage transfer to the wordlines.
- Increased reliability and lifespan of nonvolatile memory devices.
Original Abstract Submitted
A nonvolatile memory device includes a memory cell array, a voltage generator, a voltage path circuit and a wordline defect detection circuit. The memory cell array includes memory cells and wordlines connected to the memory cells. The voltage generator generates a wordline voltage applied to the wordlines. The voltage path circuit between the voltage generator and the memory cell array transfers the wordline voltage to the wordlines. The wordline defect detection circuit is connected to a measurement node between the voltage generator and the voltage path circuit. The wordline defect detection circuit measures a path leakage current of the voltage path circuit based on a measurement voltage of the measurement node to generate an offset value corresponding to the path leakage current in a compensation mode and determines defect of each wordline of the wordlines based on the offset value and the measurement voltage in a defect detection mode.
