18207979. OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES
Organization Name
Inventor(s)
SANG-WON Park of SUWON-SI (KR)
WON-TAECK Jung of SUWON-SI (KR)
SU CHANG Jeon of SUWON-SI (KR)
OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18207979 titled 'OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES
Simplified Explanation
The abstract describes an operation method for a memory device that includes a memory block connected with wordlines. The method involves receiving a command from a memory controller, activating a first block selection signal to connect the wordlines with driving lines through first pass transistors, and controlling the wordlines to perform a first operation corresponding to the command. After the first operation is completed, the method includes pre-charging the channels of the memory block with a first voltage and performing a mode recovery operation where the wordlines are controlled with a recovery voltage by deactivating the first block selection signal.
- The method involves activating a signal to connect the wordlines of a memory block with driving lines through transistors.
- The wordlines are controlled to perform a specific operation based on a received command.
- After the operation is completed, the channels of the memory block are pre-charged with a first voltage.
- A mode recovery operation is performed where the wordlines are controlled with a recovery voltage by deactivating the block selection signal.
Potential applications of this technology:
- Memory devices in computer systems, smartphones, and other electronic devices.
- Data storage and retrieval in various industries such as telecommunications, automotive, and healthcare.
Problems solved by this technology:
- Efficient and controlled operation of memory devices.
- Improved performance and reliability of memory operations.
- Enhanced data storage and retrieval capabilities.
Benefits of this technology:
- Faster and more reliable memory operations.
- Improved overall performance of electronic devices.
- Enhanced data storage and retrieval efficiency.
Original Abstract Submitted
An operation method of a memory device, having a memory block connected with wordlines, includes: (1) receiving a command from a memory controller, (2) activating a first block selection signal controlling first pass transistors configured to connect the wordlines connected with the memory block with driving lines, and (3) controlling the wordlines such that a first operation corresponding to the command is performed. After the first operation is completed, the method further includes: (4) pre-charging channels of the memory block with a first voltage and (5) performing a mode recovery operation such that the wordlines are controlled with a recovery voltage. The mode recovery operation includes deactivating the first block selection signal.
