17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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NON-VOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kuihan Ko of Seoul (KR)

Sangwon Park of Seoul (KR)

Minyong Kim of Suwon-si (KR)

Jekyung Choi of Hwaseong-si (KR)

Junho Choi of Gwangju-si (KR)

NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17742879 titled 'NON-VOLATILE MEMORY DEVICE

Simplified Explanation

Abstract: This patent application describes a non-volatile memory device that includes word lines stacked on a substrate, string select lines on the word lines, and a memory cell array with memory blocks. The string select lines are spaced apart from each other in a horizontal direction and extend in another horizontal direction. The memory device performs program operations on memory cells connected to the word lines and string select lines in a specific order.

  • The memory device includes word lines, string select lines, and memory blocks.
  • Word lines are stacked on a substrate.
  • String select lines are positioned on the word lines and spaced apart from each other in one direction.
  • String select lines extend in another direction.
  • Memory blocks consist of memory cells connected to the word lines and string select lines.
  • The memory device performs program operations on memory cells in a specific order.

Potential Applications:

  • Non-volatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
  • This technology can be applied in data storage systems, allowing for efficient and reliable data storage.

Problems Solved:

  • This technology solves the problem of efficiently programming memory cells in a non-volatile memory device.
  • By performing program operations in a specific order, the memory device ensures optimal programming efficiency.

Benefits:

  • The memory device provides improved programming efficiency by performing program operations in a specific order.
  • This technology enhances the reliability and performance of non-volatile memory devices.
  • By optimizing the programming process, the memory device can offer faster data storage and retrieval.


Original Abstract Submitted

A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.