18064635. NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME
Organization Name
Inventor(s)
Kyunghoon Sung of Seongnam-Si (KR)
Joon Suc Jang of Hwaseong-Si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18064635 titled 'NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME
Simplified Explanation
The patent application describes a nonvolatile memory device that includes cell strings grouped into memory blocks. During a precharge period, the channels of the cell strings in a selected memory block are precharged using a gate induced drain leakage (GIDL) on voltage. This GIDL on voltage induces GIDL in the cell strings. The precharge of channels in an unselected memory block is prevented by controlling the gate voltage of GIDL transistors in the unselected memory block to prevent GIDL. During a program execution period, memory cells in the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.
- Nonvolatile memory device with cell strings grouped into memory blocks
- Precharge period where channels of selected memory block are precharged using GIDL on voltage
- GIDL on voltage induces GIDL in the cell strings
- Precharge of channels in unselected memory block is prevented by controlling gate voltage of GIDL transistors
- Program execution period where memory cells in selected memory block are programmed using program voltage on selected wordline
Potential Applications
- Nonvolatile memory devices for various electronic devices such as computers, smartphones, and IoT devices
- Memory storage for data centers and cloud computing
Problems Solved
- Efficient precharging of cell strings in memory blocks
- Prevention of precharge in unselected memory blocks
- Reliable programming of memory cells
Benefits
- Improved performance and reliability of nonvolatile memory devices
- Enhanced data storage and retrieval capabilities
- Increased efficiency and speed in memory operations
Original Abstract Submitted
A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.
