17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hye Ji Lee of Hwaseong-si (KR)
Jin-Kyu Kang of Hwaseong-si (KR)
Rae Young Lee of Hwaseong-si (KR)
Jae Duk Lee of Seongnam-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17712238 titled 'SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device that includes a source layer, a channel structure, gate electrodes, and a common source line. The device performs erase operations by applying different voltages to different groups of gate electrodes.
- The semiconductor memory device has a source layer, a channel structure, gate electrodes, and a common source line.
- The gate electrodes are arranged in two groups: a first word line group and a second word line group.
- In a first erase operation interval, when the common source line reaches a target voltage, an inhibition voltage is applied to the second word line group and an erase voltage is applied to the first word line group.
- In a second erase operation interval, the inhibition voltage is applied to the first word line group and the erase voltage is applied to the second word line group.
Potential Applications
- This semiconductor memory device can be used in various electronic devices that require non-volatile memory, such as smartphones, tablets, and computers.
- It can be integrated into data storage systems, including solid-state drives (SSDs) and memory cards.
Problems Solved
- The patent addresses the need for an efficient and reliable erase operation in semiconductor memory devices.
- By applying different voltages to different groups of gate electrodes, the device ensures effective erasing of data stored in the memory.
Benefits
- The use of two word line groups and different voltages for erase operations improves the efficiency and reliability of the erase process.
- The semiconductor memory device provides a more precise control over the erase operation, resulting in better data retention and overall performance.
Original Abstract Submitted
A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.
