Samsung electronics co., ltd. (20240107773). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
KYUNGHWAN Lee of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107773 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a cell string with plural memory cells stacked on a substrate, connected to a first and second conductive pillar. Each memory cell consists of a channel layer, a ferroelectric layer, and an electrode, with the channel layer made of single crystalline silicon.
- Explanation of the patent/innovation:
- Cell string with stacked memory cells on a substrate - First and second conductive pillars connected to the cell string - Memory cells with channel layer, ferroelectric layer, and electrode - Channel layer made of single crystalline silicon
- Potential applications of this technology:
- High-density memory storage devices - Non-volatile memory applications - Embedded memory in various electronic devices
- Problems solved by this technology:
- Increased memory density - Enhanced data retention - Improved memory cell performance
- Benefits of this technology:
- Faster data access - Lower power consumption - Extended lifespan of memory devices
- Potential commercial applications of this technology:
- Smartphones and tablets - Wearable devices - IoT devices
- Possible prior art:
- Previous semiconductor memory devices with stacked memory cells - Memory devices utilizing ferroelectric layers - Memory devices with single crystalline silicon channel layers
Questions:
1. How does the use of single crystalline silicon in the channel layer improve the performance of the memory cells? 2. What are the specific advantages of using ferroelectric layers in memory cells compared to other types of materials?
Original Abstract Submitted
a semiconductor memory device includes a cell string and a first conductive pillar and a second conductive pillar connected to the cell string. the cell string includes plural memory cells, which are stacked on a substrate to be spaced apart from each other. the first conductive pillar is spaced apart from the second conductive pillar in a first direction. each of the memory cells includes a channel layer that extends from the first conductive pillar to the second conductive pillar in the first direction, a ferroelectric layer on the channel layer, and an electrode on the ferroelectric layer. the channel layer comprises single crystalline silicon.
