18197283. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18197283 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a memory cell region and a connection region. A memory stack is present, consisting of multiple word lines that extend horizontally in both the memory cell region and the connection region. These word lines overlap vertically. A support structure is positioned at the side of the memory stack in the connection region, and it includes multiple steps. On top of the support structure, there are multiple pad parts. Additionally, there are multiple contact plugs that pass through some of the word lines vertically. These contact plugs directly contact the pad parts for electrical connection.
- The patent application describes a semiconductor device with a unique memory stack configuration that allows for efficient electrical connection.
- The device includes overlapping word lines in a vertical direction, which helps in maximizing memory cell density.
- The support structure with steps provides stability and support to the memory stack.
- The contact plugs passing through the word lines enable direct electrical connection with the pad parts on the support structure.
Potential Applications
- This technology can be applied in various memory devices, such as flash memory, DRAM, or SRAM.
- It can be used in electronic devices like smartphones, tablets, and computers to enhance memory performance and density.
Problems Solved
- The configuration described in the patent application solves the problem of limited memory cell density in semiconductor devices.
- It addresses the challenge of efficient electrical connection in a compact memory stack design.
Benefits
- The overlapping word lines and vertical contact plugs increase memory cell density, allowing for more data storage in a smaller area.
- The support structure with steps provides stability and reduces the risk of damage to the memory stack.
- Direct electrical connection between the contact plugs and pad parts improves overall device performance and reliability.
Original Abstract Submitted
A semiconductor device includes a substrate including a memory cell region and a connection region. A memory stack includes a plurality of word lines extending in the memory cell region and the connection region in a horizontal direction that is parallel with an upper surface of the substrate. The plurality of word lines overlaps with each other in a vertical direction. A support is in the connection region and positioned at a side of the memory stack. The support includes a plurality of steps. A plurality of pad parts is on a top surface of the support. A plurality of contact plugs passes through at least some of the plurality of word lines in the vertical direction. The plurality of contact plugs directly contacts the plurality of pad parts for electrical connection therewith.
