17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
Yongjun Jeff Hu of Boise ID (US)
Pengyuan Zheng of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 17971443 titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation
The memory array described in the patent application comprises a conductor tier with upper and lower conductor materials of different compositions, directly coupled to channel-material strings.
- The conductor tier includes upper and lower conductor materials of different compositions.
- The through-array-via (TAV) region contains TAVs with upper and lower conductor materials, as well as a conducting material below the conductor tier.
- The lower conductor material consists of a metal-rich refractory metal nitride above a non-metal-rich refractory metal nitride, or elemental-form metals.
- Potential Applications:**
- Memory storage devices
- Integrated circuits
- Semiconductor devices
- Problems Solved:**
- Improved electrical coupling between memory cells and conductor materials
- Enhanced performance and reliability of memory arrays
- Benefits:**
- Higher efficiency in data storage and retrieval
- Increased durability and longevity of memory arrays
- Potential for faster processing speeds in electronic devices
Original Abstract Submitted
A memory array comprising strings of memory cells comprises a conductor tier. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. The channel-material strings directly electrically couple to the upper and lower conductor materials of the conductor tier. A through-array-via (TAV) region is included and comprises TAVs. The TAVs individually comprise the upper conductor material, the lower conductor material, and a conducting material that is directly below the conductor tier. The lower conductor material is directly against the upper conductor material and directly against the conducting material. The lower conductor material comprises a metal-rich refractory metal nitride directly above and directly against a non-metal-rich refractory metal nitride that is directly against the conducting material. The lower conductor material may also comprise a first elemental-form metal directly above and directly against a second elemental-form metal that is directly against the conducting material Methods are also disclosed.
