US Patent Application 17825048. HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES
Organization Name
Inventor(s)
Xiang Yang of Santa Clara CA (US)
Deepanshu Dutta of Fremont CA (US)
Muhammad Masuduzzaman of Chandler AZ (US)
Jiacen Guo of Cupertino CA (US)
HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825048 titled 'HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES
Simplified Explanation
The abstract describes a method for programming a memory array of a non-volatile memory structure, specifically MLC NAND-type memory cells. The method involves two program pulses to program selected memory cells.
- The method is for programming a memory array of a non-volatile memory structure.
- The memory array consists of MLC NAND-type memory cells.
- The method involves two program pulses.
- In the first program pulse, selected memory cells are programmed according to a first programmable state and a second programmable state.
- In the second program pulse, the selected memory cells are programmed according to a third programmable state.
Original Abstract Submitted
A method for programming a memory array of a non-volatile memory structure, wherein the memory array comprises a population of MLC NAND-type memory cells, and the method comprises: (1) in a first program pulse, programming selected memory cells according to a first programmable state and a second programmable state, and (2) in a second program pulse, programming the selected memory cells according to a third programmable state.
