18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
SE HWAN Park of YONGIN-SI (KR)
JOONSUC Jang of HWASEONG-SI (KR)
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18088046 titled 'NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
Simplified Explanation
The patent application describes a nonvolatile memory device that includes a memory cell array with stacked memory cells. The device also includes a row decoder, a page buffer circuit, a counter, and a detecting circuit.
- The memory cell array consists of cell strings with memory cells stacked on a substrate.
- The row decoder is connected to the memory cells through word lines and applies a setting voltage to at least one word line.
- The row decoder also floats the at least one word line during a floating time.
- The page buffer circuit is connected to the cell strings through bit lines and senses voltage changes of the bit lines after the at least one word line is floated.
- The page buffer circuit outputs a page buffer signal as a sensing result.
- The counter counts the number of off-cells in response to the page buffer signal.
- The detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.
Potential Applications
- Nonvolatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
- This technology can be applied in data storage systems, allowing for efficient and reliable data storage.
Problems Solved
- The nonvolatile memory device addresses the issue of detecting defect cells within the memory cell array.
- By counting the number of off-cells and outputting a detection signal, the device can identify and address any defect cells, ensuring the overall reliability and performance of the memory device.
Benefits
- The memory device's ability to detect defect cells helps in improving the overall quality and reliability of the device.
- By accurately identifying defect cells, the device can prevent data corruption and ensure the integrity of stored information.
- The technology provides a more efficient and effective way of detecting and addressing defect cells, leading to improved performance and longevity of the memory device.
Original Abstract Submitted
A nonvolatile memory device includes a memory cell array having cell strings that each includes memory cells stacked on a substrate in a direction perpendicular to the substrate. A row decoder is connected with the memory cells through word lines. The row decoder applies a setting voltage to at least one word line of the word lines and floats the at least one word line during a floating time. A page buffer circuit is connected with the cell strings through bit lines. The page buffer senses voltage changes of the bit lines after the at least one word line is floated during the floating time and outputs a page buffer signal as a sensing result. A counter counts a number of off-cells in response to the page buffer signal. A detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.
