18460203. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Satoshi Nagashima of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460203 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is located between the first and second stacked bodies, while the columnar body consists of different portions connecting the stacked bodies.
- The semiconductor memory device has a first columnar portion extending inside the first stacked body, a second columnar portion extending inside the second stacked body, and a connection portion in the interposed portion linking the two columnar portions.
- The interposed portion contains multiple layers, including a first insulating material layer, a second layer with the same insulating material, and a third layer with a different material.
Potential Applications
The technology described in this patent application could be applied in:
- Advanced semiconductor memory devices
- High-performance computing systems
Problems Solved
This innovation addresses issues related to:
- Improving data storage and retrieval efficiency
- Enhancing the reliability and durability of semiconductor memory devices
Benefits
The benefits of this technology include:
- Increased data processing speed
- Enhanced memory capacity
- Improved overall performance of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data centers
Possible Prior Art
One possible prior art for this technology could be the development of stacked memory structures in semiconductor devices.
Unanswered Questions
How does this technology impact energy consumption in electronic devices?
This article does not provide information on the energy efficiency of the semiconductor memory device described. Further research is needed to determine the impact on energy consumption.
What are the potential cost implications of implementing this technology in mass production?
The article does not discuss the cost implications of mass-producing semiconductor memory devices with this structure. Additional studies are required to evaluate the economic feasibility of widespread adoption.
Original Abstract Submitted
A semiconductor memory device includes a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is disposed between the first stacked body and the second stacked body. The columnar body includes a first columnar portion extending in a first direction inside the first stacked body, a second columnar portion extending in the first direction inside the second stacked body, and a connection portion disposed in the interposed portion and connecting the first columnar portion to the second columnar portion. At least part of the interposed portion has a first layer containing a first insulating material, a second layer disposed between the first layer and the second stacked body in the first direction and containing the first insulating material, and a third layer disposed between the first layer and the second layer in the first direction and containing a first material different from the first insulating material.
