17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Sheng Chang of Chu-bei City (TW)

Chia-En Huang of Xinfeng Township (TW)

Yi-Ching Liu of Hsinchu City (TW)

Yih Wang of Hsinchu City (TW)

THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461278 titled 'THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY

Simplified Explanation

The patent application describes a memory array that includes one-time programmable (OTP) cells. These OTP cells are connected between a program control line and a read control line. Each OTP cell consists of a programmable storage device and a switch connected between the program control line and the read control line. The program control line extends towards one side of the memory array, while the read control line extends towards the opposite side of the memory array.

  • The memory array includes one-time programmable (OTP) cells.
  • Each OTP cell has a programmable storage device and a switch.
  • The OTP cells are connected between a program control line and a read control line.
  • The program control line extends towards one side of the memory array.
  • The read control line extends towards the opposite side of the memory array.

Potential Applications

  • Non-volatile memory devices
  • Data storage systems
  • Embedded systems
  • Secure storage applications

Problems Solved

  • Provides a memory array with one-time programmable (OTP) cells.
  • Allows for permanent storage of data without the ability to modify or erase it.
  • Enhances data security by preventing unauthorized access or tampering.

Benefits

  • Provides a reliable and secure method of storing data.
  • Eliminates the risk of accidental or intentional data modification.
  • Suitable for applications requiring permanent data storage.


Original Abstract Submitted

Disclosed herein are related to a memory array including one-time programmable (OTP) cells. In one aspect, the memory array includes a set of OTP cells including a first subset of OTP cells connected between a first program control line and a first read control line. Each OTP cell of the first subset of OTP cells may include a programmable storage device and a switch connected between the first program control line and the first read control line. The first program control line may extend towards a first side of the memory array along a first direction, and the first read control line may extend towards a second side of the memory array facing away from the first side of the memory array.