US Patent Application 17752207. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Collin Howder of Boise ID (US)
Adam W. Saxler of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 17752207 titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation
The patent application describes a memory array made up of strings of memory cells, with a conductor tier made of conductor material. The memory blocks are stacked vertically and consist of alternating insulative tiers and conductive tiers. The memory cells are connected by channel-material strings that pass through the insulative and conductive tiers. The lower conductive tier directly connects the channel material and the conductor material.
- Memory array with strings of memory cells and a conductor tier
- Memory blocks stacked vertically with insulative and conductive tiers
- Channel-material strings connect memory cells through the tiers
- Lower conductive tier directly connects channel material and conductor material
- Lower conductive tier made up of upper and lower conductively-doped semiconductive material with intermediate material in between
- Intermediate material has different composition and can include carbon, nitrogen, oxygen, metal, and n-type doped material with boron
- Other embodiments and methods are also disclosed in the patent application.
Original Abstract Submitted
A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lower of the conductive tiers directly electrically coupling together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. The conducting material in the lower conductive tier comprises upper conductively-doped semiconductive material, lower conductively-doped semiconductive material, and intermediate material vertically there-between. The intermediate material is of different composition from those of the upper conductively-doped semiconductive material and the lower conductively-doped semiconductive material and comprises at least one of carbon, nitrogen, oxygen, metal, and n-type doped material also comprising boron. Other embodiments, including method, re disclosed.
