Kioxia corporation (20240096424). MEMORY DEVICE simplified abstract

MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Takuya Futatsuyama of Yokohama Kanagawa (JP)

Kenichi Abe of Kawasaki Kanagawa (JP)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096424 titled 'MEMORY DEVICE

Simplified Explanation

The memory device described in the abstract is a semiconductor column structure with multiple conductive layers and a bit line connected to it. During reading, specific voltages are applied to each conductive layer to enable data retrieval.

• Explanation of the patent/innovation:

   * The memory device consists of a semiconductor column with conductive layers on opposite sides.
   * Different voltages are applied to the conductive layers during reading to facilitate data access.
   * The voltage levels are carefully controlled to ensure efficient data retrieval and storage.

1. 1. 1. Potential Applications

This technology could be applied in:

• High-speed memory devices
• Data storage systems
• Semiconductor industry

1. 1. 1. Problems Solved

This technology addresses:

• Efficient data retrieval
• Improved memory device performance
• Enhanced semiconductor column structure

1. 1. 1. Benefits

The benefits of this technology include:

• Faster data access
• Higher memory device efficiency
• Enhanced semiconductor column design

1. 1. 1. Potential Commercial Applications

Optimized for SEO: "Memory Device Innovations for Data Storage Solutions"

• Data centers
• Consumer electronics
• Semiconductor manufacturers

1. 1. 1. Possible Prior Art

No prior art information is available at this time.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing memory device structures?

This article does not provide a direct comparison with existing memory device structures. Further research or a detailed analysis would be needed to determine the specific advantages of this innovation over current technologies.

1. 1. 1. 1. What are the potential challenges in implementing this technology on a larger scale?

The article does not address the scalability or potential challenges of implementing this technology on a larger scale. Additional research and testing would be required to assess the feasibility of mass production and commercialization.

Original Abstract Submitted

a memory device includes a semiconductor column extending above a substrate, a first conductive layer on a first side of the semiconductor column, a second conductive layer on a second side of the semiconductor column, opposite to the first conductive layer, a third conductive layer above or below the first conductive layer and on the first side of the semiconductor column, a fourth conductive layer on the second side of the semiconductor column, opposite to the third conductive layer, and a bit line connected to the semiconductor column. during reading in which a positive voltage is applied to the bit line, first, second, third, and fourth voltages applied to the first, second, third, and fourth conductive layers, respectively, wherein the first voltage and the third voltage are higher than each of the second voltage and the fourth voltage, and the third voltage is higher than the first voltage.