17954757. CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY simplified abstract (Western Digital Technologies, Inc.)

From WikiPatents
Jump to navigation Jump to search

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Liang Li of Shanghai (CN)

Xuan Tian of Shanghai (CN)

Zhen Qin of Shanghai (CN)

Yanli Zhang of San Jose CA (US)

Yan Li of Milpitas CA (US)

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17954757 titled 'CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

Simplified Explanation

The abstract describes a patent application for a technology that involves a stack of alternating layers of dielectric and conductive materials on a substrate. This stack is divided into two portions: one portion forms blocks of NAND memory, while the other portion forms a configurable capacitor structure that can be adjusted to create capacitors of different capacitance levels.

  • The technology involves a stack of alternating layers of dielectric and conductive materials on a substrate.
  • The stack is divided into two portions: one portion forms blocks of NAND memory, while the other portion forms a configurable capacitor structure.
  • The configurable capacitor structure can be adjusted to create one or more capacitors with configurable capacitance levels.

Potential Applications

The technology could be applied in the development of advanced memory storage devices, as well as in the creation of customizable capacitor structures for various electronic applications.

Problems Solved

This technology addresses the need for flexible and configurable capacitor structures, as well as the demand for high-density NAND memory blocks in electronic devices.

Benefits

The benefits of this technology include increased flexibility in capacitor design, improved memory storage capabilities, and potential cost savings in electronic device manufacturing.

Potential Commercial Applications

Potential commercial applications of this technology include the production of advanced memory chips, customizable electronic components, and innovative capacitor designs for various industries.

Possible Prior Art

One possible prior art for this technology could be the development of configurable capacitor structures in the field of electronics, as well as advancements in NAND memory technology.

Unanswered Questions

How does the configurable capacitor structure impact the overall performance of electronic devices?

The article does not delve into the specific performance enhancements or limitations that the configurable capacitor structure may bring to electronic devices.

Are there any limitations to the scalability of this technology for mass production?

The article does not address any potential challenges or constraints that may arise when scaling up the production of devices incorporating this technology for mass manufacturing.


Original Abstract Submitted

A stack of alternating layers of dielectric and conductive materials are formed on a substrate. A first portion of the stack of alternating layers forms a plurality of blocks of NAND memory. A second portion of the stack of alternating layers forms a configurable capacitor structure. The configurable capacitor structure is configurable to form one or more capacitors of configurable capacitance.