18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)

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INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER

Organization Name

Micron Technology, Inc.

Inventor(s)

Michael A. Smith of Boise ID (US)

Martin W. Popp of Boise ID (US)

INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18237070 titled 'INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER

Simplified Explanation

The patent application describes a memory device that includes two string driver circuits arranged next to each other. These circuits are arranged in an interleaved layout configuration, where the connections of the first string driver are offset from the connections of the second string driver. This arrangement allows for a shorter pitch length between the connections compared to a non-interleaved layout configuration.

  • The memory device includes two string driver circuits arranged next to each other.
  • The first and second string driver circuits are arranged in an interleaved layout configuration.
  • The connections of the first string driver are offset from the connections of the second string driver.
  • The interleaved layout configuration allows for a shorter pitch length between the connections.
  • The shorter pitch length is achieved by reducing the effective distance between the corresponding opposing connections.

Potential applications of this technology:

  • Memory subsystems in electronic devices such as computers, smartphones, and tablets.
  • Solid-state drives (SSDs) and other storage devices that require efficient memory management.

Problems solved by this technology:

  • The interleaved layout configuration reduces the pitch length between connections, allowing for more efficient memory management.
  • The offset arrangement of the connections enables a shorter effective distance between opposing connections, improving the overall performance of the memory device.

Benefits of this technology:

  • Improved memory management efficiency due to the shorter pitch length between connections.
  • Enhanced performance of the memory device through the interleaved layout configuration.
  • Increased data transfer speeds and reduced latency in memory subsystems.


Original Abstract Submitted

A memory device includes a first string driver circuit and a second string driver circuit that are disposed laterally adjacent to each other in a length direction of a memory subsystem. The first and the second string driver circuits are disposed in an interleaved layout configuration such that the first connections of the first string driver are offset from the second connections of the second string driver in a width direction. For a same effective distance between the corresponding opposing first and second connections, a first pitch length corresponding to the interleaved layout configuration of the first and second string drivers is less by a predetermined reduction amount than a second pitch length between the first and second string drivers when disposed in a non-interleaved layout configuration in which each of the first connections is in-line with the corresponding second connection.

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