17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Kohji Kanamori of Seongnam-si (KR)
Jeehoon Han of Hwaseong-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17876694 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a stack structure and vertical channel structures. It also includes lower and upper separation structures that divide the ground selection line and string selection line, respectively, along a specific direction. These separation structures are overlapped with the vertical channel structures.
- The three-dimensional semiconductor memory device has a stack structure with multiple layers stacked on a substrate.
- Vertical channel structures are arranged in columns and penetrate the stack structure.
- A lower separation structure divides the ground selection line along one direction.
- First and second upper separation structures divide the string selection line along the same direction.
- The lower and first upper separation structures are vertically overlapped with one of the columns of vertical channel structures.
- The second upper separation structures are positioned between the vertical channel structures.
Potential applications of this technology:
- Memory devices: This three-dimensional semiconductor memory device can be used in various memory applications, such as solid-state drives (SSDs), smartphones, and computers.
- Data storage: The device's stack structure and vertical channel structures allow for increased data storage capacity and improved performance.
Problems solved by this technology:
- Space efficiency: The three-dimensional design of the memory device allows for more storage capacity in a smaller physical footprint.
- Performance improvement: The vertical channel structures and separation structures enhance the device's performance by optimizing data access and transfer.
Benefits of this technology:
- Increased storage capacity: The three-dimensional design enables higher storage density, allowing for more data to be stored in the same physical space.
- Improved performance: The optimized design and arrangement of the vertical channel structures and separation structures enhance the device's speed and efficiency in accessing and transferring data.
- Space-saving: The compact design of the memory device saves physical space, making it suitable for various electronic devices with limited space availability.
Original Abstract Submitted
A three-dimensional semiconductor memory device includes: a stack structure including a ground selection line, first word lines, second word lines, and a string selection line, which are sequentially stacked on a substrate; vertical channel structures penetrating the stack structure and arranged to form a plurality of columns; a lower separation structure crossing a lower portion of the stack structure in a first direction and dividing the ground selection line along a second direction intersecting the first direction; and first and second upper separation structures crossing an upper portion of the stack structure in the first direction and dividing the string selection line along the second direction, wherein the lower separation structure and the first upper separation structure are vertically overlapped with one of the columns of the vertical channel structures, and the second upper separation structures are provided between the vertical channel structures.
