17897976. ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)

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ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

Masaaki Higuchi of Tokyo (JP)

Yoshiaki Fukuzumi of Tokyo (JP)

Hirokazu Ishigaki of Tokyo (JP)

ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17897976 titled 'ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS

Simplified Explanation

The abstract describes an electronic device with memory pillars that have a channel material and extend through a cell region and a lateral contact region. The memory pillars in the lateral contact region have at least one first step and at least one second step, with a source contact in direct contact with the channel material in the second step.

  • Memory pillars with channel material
  • Extends through cell region and lateral contact region
  • Pillars in lateral contact region have first and second steps
  • Source contact in direct contact with channel material in second step

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      1. Potential Applications
  • Memory devices
  • Data storage devices
  • Integrated circuits
      1. Problems Solved
  • Efficient memory access
  • Improved data storage capabilities
  • Enhanced performance of electronic devices
      1. Benefits
  • Higher memory density
  • Faster data access
  • Improved overall device performance


Original Abstract Submitted

An electronic device comprises memory pillars comprising a channel material. The memory pillars extend through both a cell region and a lateral contact region. A portion of the memory pillars in the lateral contact region comprise at least one first step and at least one second step. The electronic device comprises a source contact in direct contact with the channel material in the at least one second step of the portion of the memory pillars in the lateral contact region. Additional electronic devices and methods of forming an electronic device are also disclosed.

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