17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Hyunkook Park of Anyang-si (KR)
MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17881352 titled 'MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF
Simplified Explanation
The memory device and operating method described in the patent application adjust the slope of a word line voltage in a memory cell array. This is achieved by generating a word line voltage through a voltage generating circuit and using a control logic to output a slope control signal that adjusts the voltage level variation characteristic of the word line voltage.
- During the prepulse period of a read operation, the slope of the word line voltage provided to an edge group of word lines adjacent to a string selection line is greater than the slope of the word line voltage provided to a center group of word lines in the center region.
Potential applications of this technology:
- Memory devices in various electronic devices such as smartphones, tablets, and computers.
- Solid-state drives (SSDs) and other storage devices that require efficient memory operations.
Problems solved by this technology:
- Improves the read operation efficiency of memory devices by adjusting the slope of the word line voltage.
- Reduces the likelihood of errors or data corruption during memory operations.
Benefits of this technology:
- Enhanced performance and reliability of memory devices.
- Improved data transfer rates and overall system efficiency.
- Enables more efficient use of memory resources.
Original Abstract Submitted
A memory device and an operating method thereof adjust a slope of a word line voltage. The memory device includes a memory cell array including a plurality of cell strings, a voltage generating circuit configured to generate a word line voltage provided to a plurality of word lines, and a control logic configured to output a slope control signal adjusting a voltage level variation characteristic of the word line voltage provided from the voltage generating circuit, wherein, during a prepulse period of a read operation of the memory device, a slope of a first word line voltage provided to an edge group including one or more word lines, the edge group adjacent to a string selection line is greater than a slope of a second word line voltage provided to a center group including one or more word lines in a center region.
