17816651. VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT simplified abstract (Micron Technology, Inc.)
VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT
Organization Name
Inventor(s)
Darwin A. Clampitt of Wilder ID (US)
Wesley O. Mckinsey of Nampa ID (US)
John Hopkins of Meridian ID (US)
VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17816651 titled 'VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT
Simplified Explanation
The abstract describes a system for manufacturing a memory device by forming a trench between two portions of a stack. The trench has a bottom wall made of a spacer material. The system removes certain materials to reform the trench and expose a third oxide material and a channel structure. The system then removes more materials from the channel structure and deposits a metal material in the trench, in contact with a doped polysilicon material of the channel structure.
- The system forms a trench between two portions of a stack in a memory device.
- The trench has a bottom wall made of a spacer material.
- Certain oxide materials are removed to reform the trench.
- Polysilicon material is removed in a lateral direction to expose a third oxide material and a channel structure.
- More oxide materials are removed from the channel structure.
- A metal material is deposited in the trench, in contact with a doped polysilicon material of the channel structure.
Potential Applications
- Manufacturing memory devices
- Semiconductor industry
Problems Solved
- Efficient formation of trenches in memory devices
- Proper exposure of oxide materials and channel structures
- Effective deposition of metal material in the trench
Benefits
- Improved manufacturing process for memory devices
- Enhanced performance and functionality of memory devices
- Cost-effective production of memory devices
Original Abstract Submitted
For manufacturing a memory device, a system may form a trench between a first portion and a second portion of a stack. A bottom wall of the trench may include a spacer material. The system may remove a first and a second oxide material to reform the trench, and remove a polysilicon material in a lateral direction to expose a third oxide material and a channel structure. The third oxide material may form the bottom wall of the trench. The system may remove, in a lateral direction, the first oxide material, a portion of the second oxide material, the third oxide material, and a fourth oxide material of the channel structure. The system may deposit a metal material, in the trench, in contact with a doped polysilicon material of the channel structure.
