17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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NONVOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Bong-Kil Jung of Seoul (KR)

Sang-Wan Nam of Hwaseong-si (KR)

Jong Min Baek of Hwaseong-si (KR)

Min Ki Jeon of Suwon-si (KR)

Woo Chul Jung of Hwaseong-si (KR)

Yoon-Hee Choi of Hwaseong-si (KR)

NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17866904 titled 'NONVOLATILE MEMORY DEVICE

Simplified Explanation

The patent application describes a nonvolatile memory device that includes a memory cell array, voltage generators, and a temperature unit. The device adjusts the power supply voltage of the voltage generators based on the real-time temperature of the memory cell array.

  • The nonvolatile memory device includes a memory cell array.
  • It has a first voltage generator that generates a word line operating voltage for each word line of the memory cell array.
  • It also has a second voltage generator that generates a bit line operating voltage of the memory cell array.
  • The device includes a temperature unit that determines a temperature range for a temperature code based on the real-time temperature of the memory cell array.
  • The temperature unit adjusts the power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.

Potential Applications

  • Nonvolatile memory devices can be used in various electronic devices, such as smartphones, tablets, and computers.
  • This technology can be applied in data storage systems, improving the performance and reliability of memory devices.

Problems Solved

  • Nonvolatile memory devices can be affected by temperature variations, which can impact their performance and reliability.
  • This technology solves the problem of temperature-induced performance variations by adjusting the power supply voltage based on the real-time temperature of the memory cell array.

Benefits

  • By adjusting the power supply voltage based on the real-time temperature, the nonvolatile memory device can maintain optimal performance and reliability.
  • This technology ensures that the memory cell array operates within the appropriate temperature range, reducing the risk of data corruption or loss.
  • The ability to adjust the power supply voltage based on temperature allows for efficient power management in the nonvolatile memory device.


Original Abstract Submitted

Provided is a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a first voltage generator configured to generate a word line operating voltage for each word line of the memory cell array, a second voltage generator configured to generate a bit line operating voltage of the memory cell array, and a temperature unit configured to determine, from a temperature range table, a temperature range for a temperature code according to a real-time temperature of the memory cell array, and to adjust a power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.