17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Gyu-Ha Park of Hwaseong-Si (KR)

Jeongyeol Kim of Changwon-Si (KR)

Nari Lee of Hwaseong-Si (KR)

Daehan Kim of Seoul (KR)

NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17806103 titled 'NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE

Simplified Explanation

The patent application describes a nonvolatile memory device that includes a memory cell array, a row decoder circuit, a page buffer circuit, and a pass/fail check circuit.

• The memory cell array stores data in nonvolatile memory cells.
• The row decoder circuit selects a specific wordline for a program operation.
• The page buffer circuit stores the data to be written in memory cells connected to the selected wordline during the program operation.
• The pass/fail check circuit determines whether the program operation is successful or not.
• During the program operation, the pass/fail check circuit measures the program speeds of different memory cells.
• The pass/fail check circuit determines a program fail based on the comparison of the program speeds of different memory cells.

Potential applications of this technology:

• Nonvolatile memory devices such as flash memory used in various electronic devices like smartphones, tablets, and computers.
• Storage devices for data centers and servers.
• Embedded memory in automotive electronics, IoT devices, and wearable devices.

Problems solved by this technology:

• Ensures the reliability and accuracy of program operations in nonvolatile memory devices.
• Detects and prevents program failures in memory cells.
• Optimizes the programming process by comparing program speeds of different memory cells.

Benefits of this technology:

• Improves the overall performance and efficiency of nonvolatile memory devices.
• Enhances the reliability and durability of data storage.
• Reduces the risk of data corruption or loss.
• Enables faster and more accurate programming of memory cells.

Original Abstract Submitted

Disclosed is a nonvolatile memory device which includes a memory cell array, a row decoder circuit that selects one wordline as a target of a program operation, a page buffer circuit that stores data to be written in memory cells connected with the selected wordline in the program operation, and a pass/fail check circuit that determines a pass or a fail of the program operation. In the program operation, the pass/fail check circuit detects a first program speed of first memory cells and a second program speed of second memory cells, and determines a program fail based on the first program speed and the second program speed.