17851865. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Organization Name

Micron Technology, Inc.

Inventor(s)

Jordan D. Greenlee of Boise ID (US)

David Ross Economy of Boise ID (US)

John D. Hopkins of Meridian ID (US)

Nancy M. Lomeli of Boise ID (US)

Jiewei Chen of Meridian ID (US)

Rita J. Klein of Boise ID (US)

Everett A. Mcteer of Eagle ID (US)

Aaron P. Thurber of Boise ID (US)

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract

This abstract first appeared for US patent application 17851865 titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Simplified Explanation

The abstract describes a method for forming a memory array using memory cells. Here are the key points:

• The memory array is formed by creating memory block regions, each consisting of a vertical stack of insulative and conductive tiers.
• Channel-material strings run through the insulative and conductive tiers.
• The conductive tiers have void spaces that extend laterally across the memory block regions.
• Either conductive or semiconductive material is formed in the void spaces, outside of the channel-material strings.
• A conductive molybdenum-containing metal material is then formed directly against the conductive or semiconductive material.
• A conductive line is formed from the conductive molybdenum-containing metal material.
• The conductive or semiconductive material has a different composition from the conductive molybdenum-containing metal material.

Potential applications of this technology:

• Memory arrays for electronic devices such as computers, smartphones, and tablets.
• Data storage systems for servers and data centers.
• Embedded memory in integrated circuits for various electronic devices.

Problems solved by this technology:

• Provides a method for forming memory arrays with improved performance and reliability.
• Allows for the efficient use of space within the memory block regions.
• Enables the creation of memory cells with different compositions for enhanced functionality.

Benefits of this technology:

• Improved memory array performance and reliability.
• Increased data storage capacity.
• Enhanced functionality and versatility in memory cell design.

Original Abstract Submitted

A method used in forming a memory array comprising strings of memory cells comprises forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a void-space extending laterally-across individual of the memory-block regions. At least one of conductive or semiconductive material is formed in the void-space laterally-outward of individual of the channel-material strings. Conductive molybdenum-containing metal material is formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom. The at least one of the conductive or the semiconductive material is of different composition from that of the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.