Samsung electronics co., ltd. (20240130131). VERTICAL MEMORY DEVICE simplified abstract
Contents
- 1 VERTICAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130131 titled 'VERTICAL MEMORY DEVICE
Simplified Explanation
The patent application describes a memory device with word line patterns stacked on a substrate, a channel structure, and first and second contact plugs extending in the vertical direction. The word line patterns are on the cell area and cell wiring area, extending parallel to the substrate's upper surface. The first contact plugs are electrically connected to specific word line patterns and insulated from the others, while the second contact plugs are on the through-hole wiring area.
- Word line patterns stacked on substrate
- Channel structure in vertical direction
- First and second contact plugs in vertical direction
- Word line patterns on cell area and cell wiring area
- First contact plugs connected to specific word line patterns
- Second contact plugs on through-hole wiring area
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Semiconductor manufacturing
- Data storage systems
Problems Solved
The innovation addresses the following issues:
- Efficient memory storage
- Improved data retrieval speed
- Enhanced device performance
Benefits
The technology offers the following benefits:
- Higher memory capacity
- Faster data access
- Increased device reliability
Potential Commercial Applications
The technology could find applications in:
- Consumer electronics
- Computer hardware
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be:
- Stacked memory devices with vertical channel structures
Unanswered Questions
How does the technology impact power consumption in memory devices?
The patent application does not provide specific details on the power consumption implications of the described memory device.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability challenges that may arise when implementing this technology on a larger scale for commercial production.
Original Abstract Submitted
a memory device may include word line patterns stacked on a substrate and spaced from each other in a vertical direction, a channel structure extending in the vertical direction, and first contact plugs and second contact plugs extending in the vertical direction. the substrate may include a cell area, a cell wiring area, and a through-hole wiring area. the word line patterns may be on the cell area and the cell wiring area and may extend to the cell wiring area in a direction parallel to an upper surface of the substrate. the first contact plugs may be on the cell wiring area and each may be electrically connected with a corresponding one of the word line patterns and insulated from remaining word line patterns other than the corresponding one of the word line patterns. the second contact plugs may be on the through-hole wiring area.
