18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK
Organization Name
Inventor(s)
AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151734 titled 'AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK
Simplified Explanation
The patent application describes a method, apparatus, computer readable medium, and system for selecting program voltages for a memory device. Here are the key points:
- The method involves mapping a set of information bits to voltage levels of memory cells based on embedding parameters.
- The set of information bits is then programmed into the memory cells based on the mapping.
- The voltage levels of the memory cells are detected to generate detected voltage levels.
- A neural network with network parameters trained together with the embedding parameters is used to identify a set of predicted information bits based on the detected voltage levels.
Potential applications of this technology:
- Memory devices: This technology can be applied to various memory devices such as flash memory, solid-state drives, and other non-volatile memory technologies.
- Data storage: The method can improve the efficiency and accuracy of storing data in memory cells, leading to more reliable and higher capacity data storage solutions.
- Artificial intelligence: The use of a neural network in the identification process opens up possibilities for integrating this technology with AI systems for enhanced data processing and analysis.
Problems solved by this technology:
- Voltage mapping: The method provides a systematic approach to map information bits to voltage levels, ensuring accurate programming of memory cells.
- Voltage detection: The detection of voltage levels helps in verifying the programmed information bits, ensuring data integrity.
- Predictive identification: The use of a neural network allows for predicting the original information bits based on the detected voltage levels, even in the presence of noise or other disturbances.
Benefits of this technology:
- Improved memory programming: The method ensures that information bits are accurately programmed into memory cells, reducing errors and improving data reliability.
- Enhanced data retrieval: The predictive identification capability allows for efficient retrieval of information from memory cells, even in challenging conditions.
- Training efficiency: By training the network parameters together with the embedding parameters, the overall training process can be more efficient and effective.
Original Abstract Submitted
A method, apparatus, non-transitory computer readable medium, and system for selecting program voltages for a memory device are described. Embodiments of the method, apparatus, non-transitory computer readable medium, and system may map a set of information bits to voltage levels of one or more memory cells based on a plurality of embedding parameters, program the set of information bits into the one or more memory cells based on the mapping, detect the voltage levels of the one or more memory cells to generate one or more detected voltage levels, and identify a set of predicted information bits based on the one or more detected voltage levels using a neural network comprising a plurality of network parameters, wherein the network parameters are trained together with the embedding parameters.
