17871358. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NONVOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

YOU-SE Kim of HWASEONG-SI (KR)

SANG-WAN Nam of HWASEONG-SI (KR)

KEE HO Jung of SUWON-SI (KR)

NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17871358 titled 'NONVOLATILE MEMORY DEVICE

Simplified Explanation

The abstract describes a nonvolatile memory device that includes multiple planes, clock generators, clock switching controllers, control logic, and page buffers. The clock generators generate clock signals with different periods, and the clock switching controllers select one of these signals as a reference clock. The control logic includes bitline shutoff generators that generate bitline shutoff signals based on the reference clock, and the page buffers connect the bitlines and data latch nodes based on these signals.

• The nonvolatile memory device has multiple planes, allowing for increased storage capacity and improved performance.
• The clock generators generate clock signals with different periods, providing flexibility and adaptability to varying temperature conditions.
• The clock switching controllers select one of the clock signals as a reference, ensuring accurate timing for data operations.
• The bitline shutoff generators generate signals to control the connection between bitlines and data latch nodes, optimizing power consumption and reducing data errors.
• The page buffers facilitate the transfer of data between the bitlines and data latch nodes, ensuring efficient and reliable data storage.

Potential Applications

• Nonvolatile memory devices with increased storage capacity and improved performance can be used in various electronic devices, such as smartphones, tablets, and computers.
• The adaptability to temperature variations makes the memory device suitable for use in environments with fluctuating temperatures, such as automotive applications or industrial settings.

Problems Solved

• The use of multiple planes in the memory device addresses the need for higher storage capacity and improved performance in modern electronic devices.
• The variation of clock periods based on temperature helps to mitigate the impact of temperature changes on data operations, ensuring reliable and accurate memory operations.
• The control of bitline connections through the bitline shutoff signals reduces power consumption and minimizes data errors, enhancing the overall efficiency and reliability of the memory device.

Benefits

• The nonvolatile memory device offers increased storage capacity, allowing for the storage of larger amounts of data.
• The improved performance of the memory device enhances the speed and responsiveness of data operations.
• The adaptability to temperature variations ensures reliable and accurate memory operations in different environmental conditions.
• The optimized power consumption and reduced data errors contribute to the energy efficiency and reliability of the memory device.

Original Abstract Submitted

A nonvolatile memory device includes: a memory cell array including three or more planes; a first clock generator generating a first clock signal having a first period; a second clock generator generating a second clock signal having a second period that varies with the temperature; a plurality of clock switching controllers outputting one of the first and second clock signals as a reference clock signal; a control logic including a plurality of bitline shutoff generators, which output a plurality of bitline shutoff signals based on the reference clock signal; and a plurality of page buffers connecting bitlines of the planes and data latch nodes in accordance with the bitline shutoff signals.