Kioxia corporation (20240096417). SEMICONDUCTOR STORAGE DEVICE simplified abstract

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SEMICONDUCTOR STORAGE DEVICE

Organization Name

kioxia corporation

Inventor(s)

Hiroshi Maejima of Setagaya Tokyo (JP)

Katsuaki Isobe of Yokohama Kanagawa (JP)

Keita Kimura of Fujisawa Kanagawa (JP)

SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096417 titled 'SEMICONDUCTOR STORAGE DEVICE

Simplified Explanation

The semiconductor storage device described in the abstract includes a string of memory cells connected to a bit line and a source line. Data is written to adjacent memory cells sequentially from one end of the string to the other, and data is read by allowing a current to flow through the string in a specific direction.

  • Memory cells connected in a string configuration
  • Sequential writing of data to adjacent memory cells
  • Reading data by allowing current flow in a specific direction

Potential Applications

This technology could be applied in:

  • Solid-state drives
  • Flash memory devices
  • Embedded systems

Problems Solved

This technology helps in:

  • Efficient data storage
  • Faster data access
  • Improved memory cell organization

Benefits

The benefits of this technology include:

  • Higher data transfer speeds
  • Increased storage capacity
  • Enhanced data reliability

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Data centers
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

  • NAND flash memory technology

Unanswered Questions

How does this technology compare to traditional memory storage methods?

This article does not provide a direct comparison between this technology and traditional memory storage methods.

What are the potential limitations of this technology in terms of scalability?

The article does not address the potential limitations of this technology in terms of scalability.


Original Abstract Submitted

in one embodiment, a semiconductor storage device includes a string that has one end electrically connected to a bit line, and another end electrically connected to a source line, and includes a plurality of memory cells. an operation of writing data to each of a plurality of adjacent first memory cells among the plurality of memory cells is sequentially performed in a direction from a first memory cell on a side of the source line to a first memory cell on a side of the bit line. an operation of reading data from each of the plurality of adjacent first memory cells is performed to allow a current to flow through the string in a first direction from the source line to the bit line.