17861573. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Joongshik Shin of Yongin-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17861573 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device that includes a substrate, a stack structure, a seed layer, vertical channel structures, and a first contact plug.
- The device consists of a substrate, which serves as the base for the memory device.
- The stack structure is made up of interlayer dielectric layers and gate electrodes that are stacked alternately and repeatedly on the substrate.
- The stack structure includes a first stack structure on the substrate and a second stack structure on top of the first stack structure.
- A seed layer is placed between the first and second stack structures and extends horizontally.
- Vertical channel structures penetrate the stack structure and make contact with the substrate.
- A first contact plug also penetrates the stack structure and is in contact with one of the gate electrodes.
- The seed layer includes first and second seed patterns that enclose the vertical channel structures and the first contact plug.
- The first and second seed patterns are spaced apart from each other horizontally.
Potential Applications
- This technology can be used in the development of three-dimensional semiconductor memory devices.
- It can enhance the performance and storage capacity of memory devices.
Problems Solved
- The three-dimensional semiconductor memory device solves the problem of limited storage capacity in traditional memory devices.
- It addresses the need for improved performance and efficiency in memory devices.
Benefits
- The use of a stack structure and seed layer allows for increased storage capacity in the memory device.
- The vertical channel structures improve the performance and speed of data transfer.
- The first contact plug ensures efficient electrical contact between the stack structure and the gate electrodes.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate and including a first stack structure on the substrate and a second stack structure on the first stack structure, a seed layer interposed between the first and second stack structures and extended in a horizontal direction, vertical channel structures that penetrate the stack structure and are in contact with the substrate, and a first contact plug that penetrates the stack structure and is in contact with one of the gate electrodes. The seed layer may include first and second seed patterns enclosing the vertical channel structures and the first contact plug, and the first and second seed patterns may be spaced apart from each other in the horizontal direction.
