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Category:G11C16/08
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Pages in category "G11C16/08"
The following 109 pages are in this category, out of 109 total.
1
- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17709910. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17822712. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17825764. NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17831350. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847948. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852057. METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17874828. RELIABILITY BASED DATA VERIFICATION simplified abstract (Micron Technology, Inc.)
- 17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)
- 17888225. ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17894528. ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)
- 17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17898733. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17899409. TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPLE BITS AND POWER LOSS MANAGEMENT FOR TWO-PASS CORRECTIVE PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17935122. STORAGE DEVICE USING WAFER-TO-WAFER BONDING AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17935502. NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17939021. STORAGE SYSTEM AND OPERATING METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17944692. WRITE-ONCE MEMORY ENCODED DATA simplified abstract (Micron Technology, Inc.)
- 17953003. FLASH MEMORY DEVICE AND DATA RECOVER READ METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17982081. FLASH MEMORY DEVICE HAVING MULTI-STACK STRUCTURE AND CHANNEL SEPARATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17982550. MEMORY DEVICE FOR DETECTING FAIL CELL AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17983705. SEMICONDUCTOR DEVICE FOR IMPROVING RETENTION PERFORMANCE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984890. NON-VOLATILE MEMORY DEVICE AND ERASE METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18045971. MEMORY DEVICE HAVING VERTICAL STRUCTURE AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18047270. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18085717. NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18120244. SERIAL-GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149206. MEMORY DEVICES HAVING CELL OVER PERIPHERY STRUCTURE, MEMORY PACKAGES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177685. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18183008. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18207979. OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18237815. DYNAMIC LATCHES ABOVE A THREE-DIMENSIONAL NON-VOLATILE MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18362952. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18460496. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
B
K
- Kioxia corporation (20240094957). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096419). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096423). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096424). MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096426). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096429). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096430). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024
S
- Samsung electronics co., ltd. (20240096420). NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240126453). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240136008). METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
U
- US Patent Application 17752662. MEMORY DEVICE WITH REDUCED AREA simplified abstract
- US Patent Application 17825048. HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 17825439. PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE simplified abstract
- US Patent Application 17826434. TEMPERATURE DEPENDENT PROGRAMMING TECHNIQUES IN A MEMORY DEVICE simplified abstract
- US Patent Application 17828685. NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT simplified abstract
- US Patent Application 18362934. METHOD OF TESTING A MEMORY CIRCUIT AND MEMORY CIRCUIT simplified abstract
- US Patent Application 18446776. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- US Patent Application 18450241. Non-Volatile Memory Device and Method of Operating the Same simplified abstract