17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)

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READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS

Organization Name

Micron Technology, Inc.

Inventor(s)

Nicola Ciocchini of Boise ID (US)

Animesh R. Chowdhury of Boise ID (US)

Kishore Kumar Muchherla of Fremont CA (US)

Akira Goda of Tokyo (JP)

Jung Sheng Hoei of Newark CA (US)

Niccolo' Righetti of Boise ID (US)

Jonathan S. Parry of Boise ID (US)

READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17895886 titled 'READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS

Simplified Explanation

  • Receiving a read command with a logical address
  • Identifying the physical address using the logical address
  • Determining the wordline group using the physical address
  • Retrieving a slope factor based on the wordline group
  • Incrementing a read counter using the slope factor

Potential Applications

  • Memory systems
  • Data storage devices
  • Computer hardware

Problems Solved

  • Efficient memory access
  • Improved data retrieval
  • Enhanced performance of memory systems

Benefits

  • Faster read operations
  • Optimized memory usage
  • Increased efficiency in data retrieval


Original Abstract Submitted

Methods, systems, and apparatuses include receiving a read command including a logical address. The read command is directed to a portion of memory composed of blocks and each block is composed of wordline groups. The physical address for the read command is identified using the logical address. The wordline group is determined using the physical address. A slope factor is retrieved using the wordline group. A read counter is incremented using the slope factor.