17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
Contents
NAND DETECT EMPTY PAGE SCAN
Organization Name
Inventor(s)
Christina Papagianni of San Jose CA (US)
Murong Lang of San Jose CA (US)
Peng Zhang of Los Altos CA (US)
Zhenming Zhou of San Jose CA (US)
NAND DETECT EMPTY PAGE SCAN - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898043 titled 'NAND DETECT EMPTY PAGE SCAN
Simplified Explanation
The abstract describes a controller for a memory device that identifies word line groups containing erased pages in a memory block, selects a subset of these groups for a NAND detect empty page (NDEP) scan operation, and adjusts the voltage threshold for the scan based on various parameters.
- Controller identifies word line groups with erased pages in a memory block
- Subset of word line groups selected for NDEP scan operation
- Voltage threshold for NDEP scan adjusted based on parameters like program-erase cycles, memory cell type, and operating temperature
Potential Applications
- Memory devices
- Data storage systems
- Solid-state drives
Problems Solved
- Efficient identification of erased pages in memory blocks
- Improved performance of NDEP scan operations
- Adaptation of voltage threshold based on operating conditions
Benefits
- Enhanced memory device reliability
- Increased efficiency in data storage operations
- Better performance and longevity of memory devices
Original Abstract Submitted
A controller of a memory device may identify a plurality of word line groups, included in a block of a memory of the memory device, that include erased pages of the block. The controller may identify a subset of word line groups, of the plurality of word line groups, for a NAND detect empty page (NDEP) scan operation. The controller may perform, based on identifying the subset of word line groups, the NDEP scan operation for the subset of word line groups. A voltage threshold for the NDEP scan may be based on an offset voltage that can be adaptive based on parameters such as quantity of program-erase cycles, memory cell type, and/or operating temperature, among other examples.
