17898733. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Pei-Chun Liao of Hsinchu County (TW)
Yu-Kai Chang of Hsinchu City (TW)
Yi-Ching Liu of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898733 titled 'MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
Simplified Explanation
The memory device described in the patent application includes a memory array, a driver circuit, and a recover circuit, with multiple memory cells in the memory array.
- Memory cells are connected to control, data, and source lines, receiving first and second voltage signals during normal operation.
- The driver circuit outputs the first or second voltage signals to the memory cells.
- The recover circuit outputs a third voltage signal, with a voltage level higher than the highest level of the first or second voltage signals, or lower than the lowest level, during a recover operation.
- Potential Applications:**
- Data storage devices
- Computer memory systems
- Embedded systems
- Problems Solved:**
- Ensures data integrity during recovery operations
- Improves reliability of memory devices
- Benefits:**
- Enhanced data protection
- Increased system stability
- Improved overall performance
Original Abstract Submitted
A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.
