18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
GYU-HA Park of HWASEONG-SI (KR)
HYUNGSUK Kim of HWASEONG-SI (KR)
NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18057386 titled 'NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE
Simplified Explanation
The patent application describes a nonvolatile memory device that includes a memory cell array and a peripheral circuit. The peripheral circuit performs a program operation by repeatedly executing a program loop.
- The program loop involves applying a program voltage to selected memory cells and then applying a series of verify voltages to these cells.
- The program operation is considered successful if the first verify step is successful.
- If the first verify step is successful, the program operation is completed.
- If the first verify step fails, a second verify step is performed by applying a different verify voltage to the selected memory cells.
- If the second verify step fails, it is determined that the program operation has failed.
Potential applications of this technology:
- Nonvolatile memory devices, such as flash memory, can benefit from this innovation.
- This technology can be used in various electronic devices, including smartphones, tablets, and computers.
- It can improve the performance and reliability of nonvolatile memory devices.
Problems solved by this technology:
- The program operation of nonvolatile memory devices can fail due to various factors, such as noise and process variations.
- This technology provides a more robust and reliable program operation by performing multiple verify steps.
- It helps in ensuring that the programmed data is accurately stored in the memory cells.
Benefits of this technology:
- Improved reliability: The use of multiple verify steps increases the reliability of the program operation.
- Enhanced performance: By quickly determining the success or failure of the program operation, the overall performance of the memory device is improved.
- Higher data accuracy: The technology helps in accurately storing data in the memory cells, reducing the chances of data corruption or loss.
Original Abstract Submitted
A nonvolatile memory device includes a memory cell array including a plurality of memory cells, and a peripheral circuit that performs a program operation of repeatedly performing a program loop. The program loop includes performing a program by applying a program voltage to memory cells selected from the plurality of memory cells, and a first verify by applying a plurality of verify voltages to the selected memory cells. The peripheral circuit completes the program operation in response to a success of the first verify, performs a second verify by applying an additional verify voltage different from the plurality of verify voltages to the selected memory cells, and determines the program operation has failed in response to a failure of the second verify.
