18460496. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Katsuaki Sakurai of Yokohama Kanagawa (JP)
Tooru Tategami of Kawasaki Kanagawa (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460496 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the patent application includes a power input pad, internal power generation circuit, and level shifters in different regions to trigger specific operations. The internal power generation circuit generates an internal power supply voltage from an external power supply voltage and distributes it to the different regions of the device.
- The semiconductor storage device includes a first region with a level shifter and a second region with a level shifter.
- An internal power generation circuit generates an internal power supply voltage from an external power supply voltage.
- The internal power supply voltage is distributed to the first and second regions of the device.
- The internal power generation circuit sends separate signals to the level shifters in each region to trigger specific operations.
Potential Applications
The technology described in this patent application could be applied in various semiconductor storage devices, such as flash memory, solid-state drives, and microcontrollers.
Problems Solved
This technology solves the problem of efficiently triggering specific operations in different regions of a semiconductor storage device using an internal power supply voltage generated from an external power supply voltage.
Benefits
The benefits of this technology include improved power efficiency, optimized performance, and enhanced functionality in semiconductor storage devices.
Potential Commercial Applications
Potential commercial applications of this technology include the development of more efficient and high-performance semiconductor storage devices for consumer electronics, data storage systems, and industrial applications.
Possible Prior Art
One possible prior art for this technology could be the use of external power supply voltages to trigger operations in semiconductor devices, but the specific implementation of an internal power generation circuit for distributing power to different regions may be a novel aspect of this innovation.
Unanswered Questions
How does this technology impact the overall power consumption of semiconductor storage devices?
This article does not provide specific details on the power consumption implications of the described technology. Further research or testing may be needed to determine the exact impact on power efficiency.
Are there any potential limitations or constraints in implementing this technology in practical semiconductor storage devices?
The article does not address any potential limitations or constraints that may arise when implementing this technology in real-world semiconductor storage devices. Additional information or case studies may be required to understand any challenges in practical applications.
Original Abstract Submitted
A semiconductor storage device includes a first region including a level shifter, a second region including a level shifter, a power input pad, and an internal power generation circuit configured to generate an internal power supply voltage using a first power supply voltage supplied through the power input pad and supply the internal power supply voltage to the first and second regions. The internal power generation circuit separately transmits a first signal to the level shifter of the first region for triggering a start of a first operation of the first region and a second signal to the level shifter of the second region for triggering a start of a second operation of the second region.
