17852057. METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE
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Inventor(s)
METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17852057 titled 'METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract describes a method of programming a non-volatile memory device. Here is a simplified explanation of the abstract:
- The method involves initializing different word line groups in the memory device with different voltages.
- During the first channel initialization period, a higher voltage is applied to a selected word line and a nearby word line group, while a lower voltage is applied to a distal word line group.
- Then, during the first program execution period, a specific program voltage is applied to the selected word line to perform a program operation for data.
- This process is repeated during the second channel initialization period and the second program execution period, with the same or different voltages, to perform a second program operation for the data.
Potential applications of this technology:
- Non-volatile memory devices, such as flash memory or solid-state drives, could benefit from this method of programming.
- It can be used in various electronic devices, including smartphones, tablets, laptops, and servers, to improve memory performance and reliability.
Problems solved by this technology:
- The method helps in efficiently programming non-volatile memory devices by applying different voltages to different word line groups.
- It ensures that the programming operation is performed accurately and reliably, reducing the chances of data corruption or loss.
Benefits of this technology:
- Improved programming efficiency and reliability in non-volatile memory devices.
- Enhanced memory performance, leading to faster data storage and retrieval.
- Reduced risk of data corruption or loss during programming operations.
Original Abstract Submitted
A method of programming a non-volatile memory device may include; during a first channel initialization period, applying a first voltage to a selected word line and a first word line group proximate to the selected word line, and applying a second voltage lower than the first voltage to a second word line group distal from the selected word line, applying a first program voltage to the selected word line during a first program execution period in order to perform a first program operation for data, during a second channel initialization period, applying the first voltage to the selected word line and the first word line group, and applying the second voltage to the second word line group, and applying a second program voltage to the selected word line during a second program execution period in order to perform a second program operation for the data.
