Kioxia corporation (20240096430). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Hiroki Date of Chigasaki Kanagawa (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096430 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the abstract includes memory cell transistors and a word line connected to the memory cell transistors. A voltage generator is used to generate a first voltage for the word line, with a voltage divider dividing the voltage using variable resistance elements. A control unit outputs a digital signal to control the resistance value of the variable resistance element, resulting in different waveforms of the first voltage for different operations.
- Memory cell transistors and word line in a semiconductor storage device
- Voltage generator with variable resistance elements for generating first voltage
- Control unit to output digital signal for controlling resistance value
- Different waveforms of first voltage for different operations
Potential Applications
This technology could be applied in various semiconductor storage devices such as flash memory, SSDs, and other memory systems where precise control of voltage waveforms is required.
Problems Solved
This innovation addresses the need for different voltage waveforms in erasing/verifying and reading operations in semiconductor storage devices, improving overall performance and reliability.
Benefits
- Enhanced control over voltage waveforms - Improved efficiency in erasing/verifying and reading operations - Increased reliability and performance of semiconductor storage devices
Potential Commercial Applications
The technology could be utilized in the development of advanced memory systems for consumer electronics, data storage devices, and industrial applications, enhancing the overall functionality and reliability of these products.
Possible Prior Art
Prior art in the field of semiconductor storage devices may include patents or publications related to voltage generators, variable resistance elements, and control units for memory systems.
Unanswered Questions
How does this technology impact the power consumption of semiconductor storage devices?
The abstract does not provide information on the power consumption implications of this technology. It would be important to understand if the use of variable resistance elements and different voltage waveforms has any impact on power efficiency.
Are there any limitations to the scalability of this technology in larger memory systems?
The abstract does not mention any potential limitations in scaling this technology for use in larger memory systems. It would be essential to investigate if there are any challenges in implementing this innovation in high-capacity memory devices.
Original Abstract Submitted
in one embodiment, a semiconductor storage device includes memory cell transistors, and a word line electrically connected to the memory cell transistors. the device further includes a voltage generator configured to generate a first voltage transferred to the word line, the voltage generator including a voltage divider configured to divide the first voltage with first and second resistance elements, the first or second resistance element being a variable resistance element that receives a first digital signal indicating a resistance value and is changeable to the resistance value. the device further includes a control unit configured to output the first digital signal, wherein the control unit outputs the first digital signal such that a theoretical waveform of the first voltage in boosting the first voltage in an erasing verifying operation is different from a theoretical waveform of the first voltage in boosting the first voltage in a reading operation.
