US Patent Application 18446776. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Min Jae Hur of Icheon-si Gyeonggi-do (KR)
Ji Hyeun Shin of Icheon-si Gyeonggi-do (KR)
Ju Hun Kim of Icheon-si Gyeonggi-do (KR)
Bo Ram Park of Icheon-si Gyeonggi-do (KR)
Ji Woong Sue of Icheon-si Gyeonggi-do (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446776 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device with a stack structure and a slit structure.
- The stack structure consists of alternating insulation layers and conductive layers.
- The slit structure is designed to divide the stack structure into memory blocks.
- The part of the slit structure that defines one memory block has a dashed shape, including a slit region and a bridge region.
Original Abstract Submitted
A semiconductor memory device includes a stack structure and a slit structure. The stack structure includes insulation layers and conductive layers alternately stacked with the insulation layers. The slit structure is configured to divide the stack structure into memory blocks. A part of the slit structure configured to define one memory block has a dashed shape including a slit region and a bridge region.
