17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)
Contents
- 1 MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC
Organization Name
Inventor(s)
Mustafa N. Kaynak of San Diego CA (US)
Patrick R. Khayat of San Diego CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC - A simplified explanation of the abstract
This abstract first appeared for US patent application 17884113 titled 'MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC
Simplified Explanation
- Determining sensitivity of threshold voltage of memory cells to changes in adjacent memory cells - Associating wordlines with specific sensitivity metrics - Performing compensatory operations on specified memory cells - Improving memory cell performance and reliability
Potential Applications
- Memory devices - Semiconductor manufacturing - Computer hardware
Problems Solved
- Sensitivity of memory cells to changes in adjacent cells - Performance degradation of memory cells - Reliability issues in memory devices
Benefits
- Improved memory cell performance - Enhanced reliability of memory devices - Better overall functionality of semiconductor devices
Original Abstract Submitted
Embodiments disclosed can include determining, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell. Embodiments can also include determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion. Embodiments can further include responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion. Embodiments can include performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation.
